STPSC20H065CT datasheet(3/8 Pages) STMICROELECTRONICS

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STPSC20H065C

Characteristics

Doc ID 023605 Rev 2

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Table 5.

Dynamic electrical characteristics per diode

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Total capacitive charge

VR = 400 V

28.5

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

480

VR = 400 V, Tc = 25 °C, F = 1 MHz

Most accurate value for the capacitive charge: Q = cj(vR).dvR

∫

VOUT

Figure 1.

Forward voltage drop versus

forward current (typical values per

diode, low level)

Figure 2.

Forward voltage drop versus

forward current (typical values per

diode, high level)

FM(

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

a=150 °C

a=175 °C

a=25 °C

Pulse test : t

p=380µs

VFM(V)

FM(A)

100

456

a=150 °C

a=175 °C

a=25 °C

Pulse test : t

p=380µs

VFM(V)

Figure 3.

Reverse leakage current versus

reverse voltage applied

(typical values per diode)

Figure 4.

Peak forward current versus case

temperature, per diode

R(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100 150 200 250 300 350 400 450 500 550 600 650

j=25 °C

j=150 °C

j=175 °C

VR(V)

I M (A)

100

125

150

175

δ = 0.5

δ = 0.1

δ = 0.3

δ = 1

δ = 0.7

δ=tp/T

TC(°C)

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