BAP70AM

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 2 — 7 September 2010

2 of 8

NXP Semiconductors

BAP70AM

Silicon PIN diode array

4.

Marking

5.

Limiting values

6.

Thermal characteristics

Table 3.

Marking

Type number

Marking code

Description

BAP70AM

N9*

* = - : made in Hong Kong

* = p : made in Hong Kong

* = t : made in Malaysia

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

50

V

forward current

-

100

mA

total power dissipation

300

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

260

K/W