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SSM2220PZ 数据表(PDF) 3 Page - Analog Devices

部件名 SSM2220PZ
功能描述  Audio Dual Matched PNP Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

SSM2220PZ 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
SSM2220
Rev. C | Page 3 of 12
SPECIFICATIONS
TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions/Comments
CURRENT GAIN1
hFE
VCB = 0 V to 36 V
80
165
IC = 1 mA
70
150
IC = 100 μA
60
120
IC = 10 μA
Current Gain Matching2
ΔhFE
0.5
6
%
IC = 100 μA, VCB = 0 V
NOISE VOLTAGE DENSITY3
en
IC = 1 mA, VCB = 0 V
0.8
2
nV/√Hz
fO = 10 Hz
0.7
1
nV/√Hz
fO = 100 Hz
0.7
1
nV/√Hz
fO = 1 kHz
0.7
1
nV/√Hz
fO = 10 kHz
OFFSET VOLTAGE4
VOS
40
200
μV
VCB = 0 V, IC = 100 μA
Offset Voltage Change vs. Collector Voltage
ΔVOS/ΔVCB
11
200
μV
IC = 100 μA, VCB1 = 0 V, VCB2 = −36 V
Offset Voltage Change vs. Collector Current
ΔVOS/ΔIC
12
75
μV
VCB = 0 V, IC1 = 10 μA, IC2 = 1 mA
OFFSET CURRENT
IOS
6
45
nA
IC = 100 μA, VCB = 0 V
COLLECTOR TO BASE LEAKAGE CURRENT
ICBO
50
400
pA
VCB = −36 V = VMAX
BULK RESISTANCE
rBE
0.3
0.75
Ω
VCB = 0 V, 10 μA ≤ IC ≤ 1 mA
COLLECTOR SATURATION VOLTAGE
VCE(SAT)
0.026
0.1
V
IC = 1 mA, IB = 100 μA
1
Current gain is measured at collector to base voltages (VCB) swept from 0 V to VMAX at indicated collector current. Typicals are measured at VCB = 0 V.
2
Current gain matching (
ΔhFE) is defined as follows:
ΔhFE =
C
FE
B
I
h
I
min
)
)(
(
100 ∆
3
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
4
Offset voltage is defined as follows:
VOS
= VBE1 – VBE2 =


C2
C1
I
I
q
KT ln
where VOS is the differential voltage for IC1 = IC2.
ELECTRICAL CHARACTERISTICS
−40°C ≤ TA ≤ +85°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions/Comments
CURRENT GAIN
hFE
VCB = 0 V to 36 V
60
125
IC = 1 mA
50
105
IC = 100 μA
40
90
IC = 10 μA
OFFSET VOLTAGE
VOS
30
265
μV
IC = 100 μA, VCB = 0 V
Offset Voltage Drift1
TCVOS
0.3
1.0
μV/°C
IC = 100 μA, VCB = 0 V
OFFSET CURRENT
IOS
10
200
nA
IC = 100 μA, VCB = 0 V
BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER)
BVCEO
36
V
1
Guaranteed by VOS test (TCVOS = VOS/T for VOS << VBE), where T = 298K for TA = 25°C.



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