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CSD25481F4 数据表(PDF) 3 Page - Texas Instruments |
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CSD25481F4 数据表(HTML) 3 Page - Texas Instruments |
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3 / 14 page  0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 − V DS - Drain-to-Source Voltage (V) VGS = −8V VGS = −4.5V VGS = −2.5V VGS = −1.8V G001 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 − V GS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = −5V G001 CSD25481F4 www.ti.com SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 5 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Copyright © 2013–2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD25481F4 |
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