CSD25481F4 datasheet(4/14 Pages) TI1

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0.7

0.8

0.9

1.1

1.2

1.3

1.4

−75

−25

125

175

TC - Case Temperature (ºC)

VGS = −4.5V, ID = −0.5A

G001

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

− V

SD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.45

0.55

0.65

0.75

0.85

0.95

1.05

1.15

1.25

−75

−25

125

175

TC - Case Temperature (ºC)

ID = −250uA

G001

120

160

200

240

280

320

360

400

− V

GS - Gate-to- Source Voltage (V)

TC = 25°C,I D = −0.5A

TC = 125°C,I D = −0.5A

G001

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Qg - Gate Charge (nC)

ID = −0.5A

VDS = −10V

G001

100

120

140

160

180

200

− V

DS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD25481F4

SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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