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HTP4A80H 数据表(PDF) 4 Page - SemiHow Co.,Ltd. |
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HTP4A80H 数据表(HTML) 4 Page - SemiHow Co.,Ltd. |
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4 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 Typical Characteristics Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time Fig 9. Instantaneous on state current vs. Instantaneous on state voltage R G R L V DD V G (1) Quadrant I R G R L V DD V G (2) Quadrant II R G R L V DD V G (3) Quadrant III R G R L V DD V G (4) Quadrant IV Measurement of gate trigger current Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. 10 -2 10 -1 10 0 10 1 10 0 10 1 Pulse Time [sec] 0 1 2 3 4 5 10 -1 10 0 10 1 10 2 25 oC Instantaneou on state voltage, V T [V] 150 oC -50 -25 0 25 50 75 100 125 150 0 1 2 Junction Temperature, T J [ oC] R S=0.008Ω V TO=1.15V |
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