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HTP4A80H 数据表(PDF) 3 Page - SemiHow Co.,Ltd. |
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HTP4A80H 数据表(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 0 1 2 3 4 5 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o R.M.S. on state current, I T(RMS) [A] 30 o 0 1 2 3 4 5 0 2 4 6 8 30 o 60 o 90 o 120 o 150 o R.M.S. on state current, I T(RMS) [A] 180 o 10 0 10 1 10 2 0 10 20 30 40 50 50Hz 60Hz Time [cycles] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ oC] I +GT1 I -GT1 I -GT3 P G(AV)(0.5W) P GM(5W) V GD Gate current, I G [mA] -50 -25 0 25 50 75 100 125 150 0 1 2 Junction temperature, T J [ oC] I +GT1 I -GT1 I -GT3 -50 -25 0 25 50 75 100 125 150 0 1 2 Junction temperature, T J [ oC] V +GT1 V -GT1 V -GT3 Typical Characteristics Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature |
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