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CMPWR025 数据表(PDF) 5 Page - California Micro Devices Corp

部件名 CMPWR025
功能描述  Dual Input SmartOR Power Switch
PDF  7 Pages
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制造商  CALMIRCO [California Micro Devices Corp]
网页  http://www.calmicro.com
标志 CALMIRCO - California Micro Devices Corp

CMPWR025 数据表(HTML) 5 Page - California Micro Devices Corp

  CMPWR025 Datasheet HTML 1Page - California Micro Devices Corp CMPWR025 Datasheet HTML 2Page - California Micro Devices Corp CMPWR025 Datasheet HTML 3Page - California Micro Devices Corp CMPWR025 Datasheet HTML 4Page - California Micro Devices Corp CMPWR025 Datasheet HTML 5Page - California Micro Devices Corp CMPWR025 Datasheet HTML 6Page - California Micro Devices Corp CMPWR025 Datasheet HTML 7Page - California Micro Devices Corp  
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© 2000 California Micro Devices Corp. All rights reserved.
10/18/2000
5
CMPWR025
CALIFORNIA MICRO DEVICES
215 Topaz Street, Milpitas, California 95035

Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
TYPICAL DC CHARACTERISTICS
Switch Resistance vs. V
CC with Temperature in Figure
1 shows the switch resistance measured at 500mA load,
over a wide V
CC voltage range. The resistance is shown
at ambient temperatures of 0°C, 25°C, and 70°C. When
the temperature rises from 25°C to 70°C, the switch
resistance increases by about 20%.
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2.5
3.5
4.0
4.5
VCC (V)
5.0
5.5
6.0
3.0
70˚C
25˚C
0˚C
Figure 1.
Switch Resistance vs. V
CC with Temperature
Supply Current vs. V
CC with Temperature in Figure 2
shows how the small internal supply current varies with
V
CC voltage and temperature. This current will be drawn
from the selected V
CC input, and will be dissipated
through ground pin 5. This current is independent of
load current.
40
35
30
25
20
15
10
2.5
3.5
4.0
4.5
VCC (V)
5.0
5.5
6.0
3.0
70˚C
25˚C
0˚C
Figure 2. Supply Current vs. V
CC
with Temperature (No Load)
150
175
200
125
100
75
50
25
0
2.5
4.5
Temperature (˚C)
5.5
6.5
7.5
3.0
VCC1SEL
VHYS1
VHYS2
Figure 3. Hysteresis Voltage vs.Temperature
POWER DISSIPATION
AND OUTPUT CURRENT CONSIDERATION
The CMPWR025 is supplied in standard SOIC or MSOP
packages, which have a maximum power dissipation
rating of 0.3W. It is important that the heat generated
within the part does not exceed this rating. The heat
generated by the load current is given by:
P
DISS = VSW X ILOAD
or
P
DISS = RSW X (ILOAD)
2
At a typical load of 375mA the P
DISS is just 0.4 x (0.375)
2
= 56mW.
A primary consideration is Maximum Junction Tempera-
ture, T
J(max), which can be calculated using the following
formula:
T
J(max) = TA + θJA X
P
DISS
Where: T
A = The Ambient Temperature
θ
JA = Thermal Resistance = 100 °C/W
P
DISS = Power Dissipation
In the above example operating at an ambient of 70°C,
T
j(max) would be:
T
J(max) = 70°C + (0.056W)(100°C/W) = 75.6°C
Maximum power dissipation, including the power from
the other circuitry within the device, suggests a current
rating of approximately:
PDISS – PINT
RSW
= ILOAD
0.3W – 100µW
0.4
= 865mA
Note that this is beyond the maximum current rating of
the device, which is to 750mA maximum.



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