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STL65DN3LLH5 数据表(PDF) 1 Page - STMicroelectronics |
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STL65DN3LLH5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() December 2010 Doc ID 18323 Rev 1 1/12 12 STL65DN3LLH5 Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STL65DN3LLH5 30 V <0.0065 Ω 19 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ (5x6) Double island Table 1. Device summary Order code Marking Package Packaging STL65DN3LLH5 65DN3LLH5 PowerFLAT™(5x6) Double island Tape and reel www.st.com |
类似零件编号 - STL65DN3LLH5 |
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类似说明 - STL65DN3LLH5 |
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