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STL65DN3LLH5 数据表(PDF) 3 Page - STMicroelectronics |
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STL65DN3LLH5 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STL65DN3LLH5 Electrical ratings Doc ID 18323 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ± 22 V ID (1) 1. The value is rated according Rthj-c Drain current (continuous) at TC = 25 °C 65 A ID (1) Drain current (continuous) at TC = 100 °C 41 A ID (2) 2. The value is rated according Rthj-pcb Drain current (continuous) at TC = 25 °C 19 A ID (2) Drain current (continuous) at TC=100°C 11.8 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 76 A PTOT (1) Total dissipation at TC = 25°C 60 W PTOT (2) Total dissipation at TC = 25°C 4 W Derating factor 0.03 W/°C TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 2.08 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-ambient 32 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current, (pulse width limited by TJ max) 18.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) 270 mJ |
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