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LCP1531RL 数据表(PDF) 3 Page - STMicroelectronics |
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LCP1531RL 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() DocID13397 Rev 5 3/10 LCP1531 Characteristics 10 Figure 2. Electrical characteristics (definitions) Figure 3. Pulse waveform Table 3. Absolute ratings (Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IPP Peak pulse current 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs 25 65 32 37.5 45 60 100 A ITSM Non-repetitive surge peak on-state current (50 Hz sinusoidal) t = 20 ms t = 200 ms t = 1 s 16 9 6 A IGSM Maximum gate current (50 Hz sinusoidal) t = 10 ms 2 A VGn Negative battery voltage range -175 V Tstg Tj Storage temperature range Operating junction temperature range -55 to +150 -40 to +150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C VR IPP IH IR VF I V Symbol Parameter I = Gate triggering current V = Peak forward voltage LINE / GND V = Gate triggering voltage V = Forward drop voltage LINE /GND I = Reverse leakage current GATE / LINE I = Holding current V = Reverse voltage GATE / LINE V = Dynamic switching voltage GATE / LINE LINE / GND C = Capacitance LINE /GND GT FP GT F RG H RG DGL I = Peak pulse current I = Breakdown current V = Forward drop voltage PP R F 100 50 %IPP t t r p 0 Pulse waveform 10/1000 µs: t = 10 µs t = 1000 µs r p |
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