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LCP1531RL 数据表(PDF) 4 Page - STMicroelectronics |
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LCP1531RL 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics LCP1531 4/10 DocID13397 Rev 5 Table 4. Parameters related to the diode LINE / GND (Tamb = 25 °C) Symbol Test conditions Max. Unit VF IF = 5 A t = 500 µs 3 V VFP 10/700 µs VPP = 1.5 kV RS = 15 Ω 5V Table 5. Parameters related to the protection thyristors (Tamb = 25 °C) Symbol Test conditions Min. Max. Unit IGT VLINE = -48 V 0.1 5 mA IH VGn = -48 V 150 mA IRG VRG = -75 V 5 µA VDGL VGn = -48 V (1) 1. The oscillations with a time duration lower than 50 ns are not taken into account. 10/700 µs VPP = 1.5 kV RS = 15 Ω IPP = 27.5 A 7 V Table 6. Parameters related to diode and protection thyristors (Tamb = 25 °C,) Symbol Test conditions Typ. Max. Unit IR VGn / LINE = -1 V VRM = -75 V Tj = 25 °C 5 µA C VLINE = -50 V, VRMS = 1 V, F = 1 MHz VLINE = -2 V, VRMS = 1 V, F = 1 MHz 15 35 pF Table 7. Recommended gate capacitance Symbol Component Min. Typ. Max. Unit CG Gate decoupling capacitance 100 220 nF |
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