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LMV358IPW 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LMV358IPW 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 45 page ![]() VBIAS4 – + – + IN+ IN- VBIAS1 VBIAS2 VBIAS3 – + – + Output VCC VCC VCC VCC IN– IN+ OUT LMV321, LMV358 LMV324, LMV324S SLOS263V – AUGUST 1999 – REVISED DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Symbol (Each Amplifier) LMV324 Simplified Schematic 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated |
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