UFZ34L-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

UFZ34

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

VER.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC=25°C

TC=100°C

Pulsed (Note 1)

IDM

112

Avalanche Current (Note 1)

IAR

Avalanche Energy

Single Pulsed (Note 2)

EAS

Repetitive (Note 1)

EAR

6.8

Peak Diode Recovery dv/dt (Note 3)

dv/dt

5.0

V/ns

Power Dissipation

TC=25°C

Linear Derating Factor

0.46

W/°C

Junction Temperature

-55~+175

°C

Storage Temperature Range

TSTG

-55~+175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

3.3

°C/W

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. L=670µH, IAS=17A, RG=25Ω, Starting TJ=25°C.

3. ISD≤17A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ≤175°C.

UFZ34L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

UFZ34L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

数据表下载