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UFZ34L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UFZ34L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() UFZ34 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-900-.a ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 60 V Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 25 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=10V, ID=17A 0.042 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 680 pF Output Capacitance COSS 220 pF Reverse Transfer Capacitance CRSS 80 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=48V, ID=17A (Note 4) 30 nC Gate to Source Charge QGS 6.7 nC Gate to Drain Charge QGD 12 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=17A, RG=13Ω, RD=1.8Ω (Note 2) 5.1 ns Rise Time tR 30 ns Turn-OFF Delay Time tD(OFF) 22 ns Fall-Time tF 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 28 A Maximum Body-Diode Pulsed Current (Note 1) ISM 100 A Drain-Source Diode Forward Voltage (Note 2) VSD TJ=25°C, IS=17A, VGS=0V 1.3 V Body Diode Reverse Recovery Time tRR TJ=25°C, IF=17A, di/dt=100A/µs 63 95 ns Body Diode Reverse Recovery Charge (Note 2) QRR 130 200 nC Forward Turn-On Time tON Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse width≤300µs, Duty cycle≤2%. |
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