UTT80N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-706.c



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

80

A

65

A

Pulsed (Note 3)

320

A

Avalanche Current (Note 3)

80

A

Avalanche Energy

Single Pulsed (Note 4)

480

mJ

Repetitive (Note3)

17.6

mJ

Power Dissipation

TO-220/TO-263

147

W

SOP-8

5.2

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

62.5

°C/W

SOP-8

110

Junction to Case

TO-220/TO-263

0.85

°C/W

SOP-8

24