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UTT80N06G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UTT80N06G-S08-R
功能描述  60V, 80A N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT80N06G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

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UTT80N06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-706.c
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TJ=25°C
60
V
Breakdown Voltage Temperature Coefficient △BVDSS △
/TJ Reference to 25°C, ID=250µA
0.075
V/°C
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
1
µA
VDS=48V, TC=150°C
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
8.5
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
2450 3190 pF
Output Capacitance
COSS
910 1190 pF
Reverse Transfer Capacitance
CRSS
145
190
pF
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG(TOT)
VGS=10V, VDS=48V, ID=80A
(Note 1, 2)
57
74
nC
Gate to Source Charge
QGS
15
nC
Gate to Drain Charge
QGD
24
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=80A, RG=25Ω
(Note 1, 2)
32
75
ns
Rise Time
tR
259
528
ns
Turn-OFF Delay Time
tD(OFF)
136
282
ns
Fall-Time
tF
113
236
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
80
A
Maximum Body-Diode Pulsed Current
ISM
320
A
Drain-Source Diode Forward Voltage
VSD
IS=80A, VGS=0V
1.4
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature typical characteristics



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