ACS108 datasheet(2/13 Pages) STMICROELECTRONICS

2 / 13 page

Characteristics

ACS108

2/13

DocID6518 Rev 5

Characteristics

Table 2. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (full sine wave)

TO-92

Tamb = 64 °C

0.45

Tlead = 76 °C

0.8

SOT-223

S = 5 cm2

Tamb = 76 °C

Ttab = 104 °C

ITSM

Non repetitive surge peak on-state current

(full cycle sine wave, Tj initial = 25 °C)

F = 60 Hz

t = 16.7 ms

13.7

F = 50 Hz

t = 20 ms

I2t

I²t Value for fusing

tp = 10 ms

1.1

A2s

dI/dt

Critical rate of rise of on-state current

IG = 2xIGT, tr  100 ns

F = 120 Hz

Tj = 125 °C

100

A/µs

VPP

Non repetitive mains peak mains voltage(1)

2kV

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

VGM

Peak positive gate voltage

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

-30 to +125

°C

According to test described by IEC 61000-4-5 standard and Figure 18

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VOUT = 12 V, RL = 33 

II - III

Max.

VGT

II - III

Max.

VGD

VOUT = VDRM, RL = 3.3 kTj = 125 °C

II - III

Min.

0.15

IOUT = 100 mA

Max.

IG = 1.2 x IGT

Max.

dV/dt

VOUT = 402 V, gate open, Tj = 125 °C

Min.

2000

V/µs

VOUT = 536 V, gate open, Tj = 125 °C

Min.

400

V/µs

(dI/dt)c

Without snubber (15 V/µs), Tj = 125 °C, turn-off time  20 ms

Min.

A/ms

VCL

ICL = 0.1 mA, tp = 1 ms, ACS108-6

Min.

650

ICL = 0.1 mA, tp = 1 ms, ACS108-8

Min.

850

Minimum IGT is guaranteed at 10% of IGT max

ACS108 数据表(PDF) 2 Page - STMicroelectronics

ACS108 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

ACS108 数据表(PDF) 2 Page - STMicroelectronics

ACS108 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载