ACS108 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

ACS108

4/13

DocID6518 Rev 5

Figure 4. On-state rms current versus ambient

temperature (free air convection)

Figure 5. Relative variation of thermal

impedance junction to ambient versus pulse

duration

(A)

T(RMS)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

100

125

Single layer Printed

circuit board FR4

Natural convection

TO-92

SOT-223

a =180°

Ta °C

K=[Z

th(j-a)/Rth(j-a)]

0.01

0.10

1.00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

Zth(j-a)

SOT-223

Copper surface

area = 5cm²

TO-92

SOT-223

t (s)

Figure 6. Relative variation of holding and

latching current versus junction temperature

Figure 7. Relative variation of IGT and VGT

versus junction temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

IH,IL [Tj]/ IH,IL [Tj=25 °C]

Tj(°C)

IGT,VGT [Tj]/ IGT,VGT,[Tj=25 °C]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-50

-25

100

125

IGT Q2

VGT Q2-Q3

IGT Q3

Tj(°C)

Figure 8. Surge peak on-state current versus

number of cycles

Figure 9. Non repetitive surge peak on-state

current for a sinusoidal pulse, and

corresponding value of I²t

ITSM(A)

100

1000

Non repetitive

Tj initial=25 °C

TO-92

Repetitive

Tlead = 76 °C

SOT-223

Repetitive

Ttab = 104 °C

One cycle

t=20ms

Number of cycles

TSM(A), I²t (A²s)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0.01

0.10

1.00

10.00

ITSM

I²t

Sinusoidal pulse,

tp < 10 ms

Tj initial = 25 °C

(ms)

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