CY7C0430V
PRELIMINARY
7
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65
°C to + 150°C
Ambient Temperature with
Power Applied ............................................–55
°C to + 125°C
Supply Voltage to Ground Potential .............. –0.5V to + 4.6V
DC Voltage Applied to
Outputs in High Z State............................–0.5V to VCC+0.5V
DC Input Voltage ..................................... –0.5V to VCC+0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VDD
Commercial
0
°C to +70°C
3.3V
± 150 mV
Industrial
–40
°C to +85°C
3.3V
± 150 mV
Electrical Characteristics Over the Operating Range
Parameter
Description
CY7C0430V
Unit
-133
-100
Min.
Typ
Max
Min.
Typ
Max
VOH
Output HIGH Voltage
(VCC = Min., IOH = –4.0 mA)
2.4
2.4
V
VOL
Output LOW Voltage
(VCC = Min., IOH = +4.0 mA)
0.4
0.4
V
VIH
Input HIGH Voltage
2.0
2.0
V
VIL
Input LOW Voltage
0.8
0.8
V
IOZ
Output Leakage Current
–10
10
–10
10
µA
ICC
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Indust.
413
750
330
600
mA
Com’l.
mA
ISB1
Standby Current (4 Ports toggling
at TTL Levels,0 active) CE1-4 ≥
VIH, f = fMAX
Indust.
80
200
60
150
mA
Com’l.
mA
ISB2
Standby Current (4 Ports toggling
at TTL Levels, 1 active) CE1 | CE2
| CE3 | CE4 < VIH, f = fMAX
Indust.
170
349
128
263
mA
Com’l.
mA
ISB3
Standby Current (4 Ports CMOS
Level, 0 active) CE1-4 ≥ VIH, f = 0
Indust.
0.5
1
0.5
1
mA
Com’l.
µA
ISB4
Standby Current (3 Ports CMOS
Level, 1 Port TTL active) CE1 |
CE2 | CE3 | CE4 < VIH, f = fMAX
Indust.
110
200
83
151
mA
Com’l.
mA
JTAG TAP Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = −4.0 mA
2.4
V
VOL1
Output LOW Voltage
IOL = 4.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
IX
Input Leakage Current
GND
≤ V
I ≤ VDD
–100
100
µA
Capacitance
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
8
pF
COUT
Output Capacitance
8
pF
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