BAS70AS3 datasheet(2/6 Pages) CYSTEKEC

2 / 6 page

CYStech Electronics Corp.

Spec. No. : C248S3

Issued Date : 2012.07.09

Revised Date :

Page No. : 2/6

BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3

CYStek Product Specification

Absolute Maximum Ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

continuous reverse voltage

continuous forward current

IFRM

repetitive peak forward current

tp≤1s, δ≤0.5

100

Ptot

total power dissipation (per package)

Tamb≤25℃

200

Tstg

storage temperature

-65

+150

℃

Tamb

operating ambient temperature

-55

+125

℃

Characteristics (Ta=25

°C, unless otherwise specified)

Parameter

Symbol

Condition

Min.

Max.

Unit

Reverse Breakdown Voltage

VBR

IR=10μA

VF(1)

IF=1mA

410

Forward Voltage (Note 1)

VF(2)

IF=15mA

1000

Reverse Leakage Current (Note 1)

VR=50V

100

Diode Capacitance

VR=0V, f=1MHz

Reverse Recovery Time

trr

when switched from IF= 10mA

to IR=10mA; RL=100

Ω;

measured at IR=1mA

Notes

: 1.pulse test, tp=300μs, duty cycle<2%.

Thermal Characteristics

Symbol

Parameter

Conditions

Value

Unit

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

Note 1 : Refer to SOT-323 standard mounting conditions.

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