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STB36NM60N 数据表(PDF) 1 Page - STMicroelectronics |
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STB36NM60N 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. October 2013 DocID023785 Rev 3 1/18 18 STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Automotive switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. 1 2 3 TO-247 1 3 TAB D2PAK Order codes VDSS @TJ max. RDS(on) max. ID STB36NM60ND 650 V 0.110 Ω 29 A STW36NM60ND Table 1. Device summary Order codes Marking Package Packaging STB36NM60ND 36NM60ND D2PAK Tape and reel STW36NM60ND 36NM60ND TO-247 Tube www.st.com |
类似零件编号 - STB36NM60N |
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类似说明 - STB36NM60N |
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