STB36NM60N datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

DocID023785 Rev 3

3/18

STB36NM60ND, STW36NM60ND

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

116

PTOT

Total dissipation at TC = 25 °C

190

dv/dt(2)

ISD ≤ 29 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS,VDSPeak < V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-247

Rthj-case

Thermal resistance junction-case max

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance junction-pcb max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

110

STB36NM60N 数据表(PDF) 3 Page - STMicroelectronics

STB36NM60N 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

数据表下载

链接网址

STB36NM60N 数据表(PDF) 3 Page - STMicroelectronics

STB36NM60N 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

数据表 下载

链接网址

数据表下载