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2SC2148 数据表(PDF) 3 Page - NEC |
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2SC2148 数据表(HTML) 3 Page - NEC |
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3 / 8 page ![]() 2SC2148, 2SC2149 3 2SC2148 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 14 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 50 mA Total Power Dissipation PT(TA = 48 °C) 250 mW Total Power Dissipation PT(Tc = 150 °C) 250 mW Junction Temperature Tj 200 °C Storage Temperature Tstg −65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µAVCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µAVEB = 2.0 V, IC = 0 DC Current Gain hFE 30 80 200 VCE = 10 V, IC = 10 mA Gain Bandwidth Product fT 3.0 GHz VCE = 10 V, IC = 10 mA Output Capacitance * Cob 0.55 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Gain S21e2 7.5 9.3 dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz Noise Figure NF 2.1 3.5 dB VCE = 10 V, IC = 3.0 mA, f = 500 MHz Maximum Available Gain MAG 13.3 dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz * The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge. TYPICAL CHARACTERISTICS (TA = 25 °C) 200 100 50 20 10 0.5 1 5 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V IC −Collector Current−mA 10 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 10 5 1 0.5 0.5 0.6 0.7 0.8 0.9 VBE −Base to Emitter Voltage−V VCE = 10 V |
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