 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
DS2016 数据表(PDF) 1 Page - Dallas Semiconductor |
|
|
|||||||||||||||||||||||||||||
DS2016 数据表(HTML) 1 Page - Dallas Semiconductor |
|
|
1 / 9 page  1 of 9 092399 FEATURES § Low-power CMOS design § Standby current − 50 nA max at t A = 25°C VCC = 3.0V − 100 nA max at t A = 25°C VCC = 5.5V − 1 µA max at t A = 60°C VCC = 5.5V § Full operation for V CC = 5.5V to 2.7V § Data retention voltage = 5.5V to 2.0V § Fast 5V access time − DS2016 - 100 100 ns − DS2016 - 150 150 ns § Reduced-speed 3V access time − DS2016 - 100 250 ns − DS2016 - 150 250 ns § Operating temperature range of -40°C to +85°C § Full static operation § TTL compatible inputs and outputs over voltage range of 5.5V to 2.7 volts. § Available in 24-pin DIP and 24-pin SOIC packages § Suitable for both battery operated and battery backup applications PIN ASSIGNMENT PIN DESCRIPTION A0 - A10 - Address Inputs DQ0 - DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC - Power Supply Input 2.7V - 5.5V GND - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100 ns when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density. DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com 1 2 3 4 5 6 7 8 9 10 11 12 13 24 23 22 21 20 19 18 17 16 15 14 VCC A8 A9 WE OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND DS2016 24-Pin DIP (600-mil) DS2016R 24-Pin SOIC (300-mil) |
类似零件编号 - DS2016 |
|
类似说明 - DS2016 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
