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DS2016 数据表(PDF) 3 Page - Dallas Semiconductor

部件名 DS2016
功能描述  2k x 8 3V/5V Operation Static RAM
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor

DS2016 数据表(HTML) 3 Page - Dallas Semiconductor

  DS2016 Datasheet HTML 1Page - Dallas Semiconductor DS2016 Datasheet HTML 2Page - Dallas Semiconductor DS2016 Datasheet HTML 3Page - Dallas Semiconductor DS2016 Datasheet HTML 4Page - Dallas Semiconductor DS2016 Datasheet HTML 5Page - Dallas Semiconductor DS2016 Datasheet HTML 6Page - Dallas Semiconductor DS2016 Datasheet HTML 7Page - Dallas Semiconductor DS2016 Datasheet HTML 8Page - Dallas Semiconductor DS2016 Datasheet HTML 9Page - Dallas Semiconductor  
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DS2016
3 of 9
AC CHARACTERISTICS READ CYCLE
(TA= -40°C to +85°C; VCC = 5V ± 10%)
DS2016-100
DS2016-150
PARAMETER
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
NOTES
Read Cycle Time
tRC
100
150
ns
Access Time
tACC
100
150
ns
OE
to Output Valid
tOE
50
70
ns
CE
to Output Valid
tCO
100
150
ns
CE
or OE to Output
Active
tCOE
5
5
ns
Output High-Z from
Deselection
tOD
5
35
10
60
ns
Output Hold from
Address Change
tOH
5
10
ns
AC CHARACTERISTICS WRITE CYCLE
(TA= -40°C to +85°C; VCC = 5V ± 10%)
DS2016-100
DS2016-150
PARAMETER
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
NOTES
Write Cycle Time
tWC
100
150
ns
Write Pulse Width
tWP
75
120
ns
Address Setup Time
tAW
0
0
ns
Write Recovery
Time
tWR
10
10
ns
Output High-Z from
WE
tODW
35
70
ns
Output Active from
WE
tOEW
5
5
ns
Data Setup Time
tDS
40
60
ns
Data Hold Time
tDH
0
0
ns
DATA RETENTION CHARACTERISTICS
(TA = -40°C to +85°C)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Data Retention Supply
Voltage
VDR
CE
≥ V
CC - 0.5V
2.0
5.5
V
Data Retention
Current at 5.5V
ICCR1
CE
≥ V
CC - 0.5V
0.1*
1
µA
Data Retention
Current at 2.0V
ICCR2
CE
≥ V
CC - 0.5V
50*
750
nA
Chip Deselect to Data
Retention
tCDR
0
µs
Recovery Time
tR
2
ms
* Typical values are at 25°C



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