DATA SHEET

SILICON TRANSISTOR

2SC3356

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10356EJ5V1DS00 (5th edition)

Date Published March 1997 N

Printed in Japan

1985

©

DESCRIPTION

The 2SC3356 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

• High Power Gain

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

120

300

Gain Bandwidth Product

7

GHz

Feed-Back Capacitance

0.55

1.0

pF

Insertion Power Gain

11.5

dB

Noise Figure

NF

1.1

2.0

dB

*

Pulse Measurement PW

 350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

Class

R23/Q *

R24/R *

R25/S *

Marking

R23

R24

R25

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

1.5

2

1

3

Marking

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

2.8±0.2

0.65

+0.1

−0.15