SILICON TRANSISTOR

2SC3357

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DATA SHEET

Document No. P10357EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1985

©

DESCRIPTION

The 2SC3357 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

2

× 0.7 mm Ceramic Substrate.

°C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

1.2

W

Thermal Resistance

62.5

°C/W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

* mounted on 16 cm

2

× 0.7 mm Ceramic Substrate

PACKAGE DIMENSIONS

(Unit: mm)

Term, Connection

E

C

B

(SOT-89)

: Emitter

: Collector (Fin)

: Base

0.41

−0.03

+0.05

0.47

±0.06

0.42±0.06

4.5±0.1

1.6±0.2

3.0

EB

C

1.5

1.5±0.1

0.42

±0.06