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2SC3357 数据表(PDF) 2 Page - NEC |
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2SC3357 数据表(HTML) 2 Page - NEC |
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2 / 8 page ![]() 2 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µA VEB = 1.0 V, IC = 0 DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA Gain Bandwidth Product fT 6.5 GHz VCE = 10 V, IC = 20 mA Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain S21e2 9dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz * Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification Class RH RF RE Marking RH RF RE hFE 50 to 100 80 to 160 125 to 250 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.0 1.0 0 50 100 150 TA-Ambient Temperature- °C 0.3 0.5 1 2 0 0.5 1 2 5 10 20 30 VCB-Collector to Base Voltage-V FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz Free Air Rth(j-a) 312.5 ˚C/W Ceramic Substrate 16 cm2 × 0.7 mm |
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