DATA SHEET

SILICON TRANSISTOR

2SC3583

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10360EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

©

DESCRIPTION

The 2SC3583 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

FEATURES

• NF

1.2 dB TYP.

@f = 1.0 GHz

• Ga

13 dB TYP.

@f = 1.0 GHz

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

100

250

Gain Bandwidth Product

9

GHz

Feed-Back Capacitance

0.35

0.9

pF

Insertion Power Gain

11

13

dB

Maximum Available Gain

MAG

15

dB

Noise Figure

NF

1.2

2.5

dB

*

Pulse Measurement PW

 350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

Class

R33/Q *

R34/R *

R35/S *

Marking

R33

R34

R35

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

1.5

2

1

3

Marking

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

2.8±0.2

0.65

+0.1

−0.15