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STM32L151C6 数据表(PDF) 77 Page - STMicroelectronics |
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STM32L151C6 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 131 page  DocID17659 Rev 9 77/131 STM32L151x6/8/B, STM32L152x6/8/B Electrical characteristics 105 6.3.9 Memory characteristics The characteristics are given at TA = -40 to 105 °C unless otherwise specified. RAM memory Flash memory and data EEPROM Table 34. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). STOP mode (or RESET) 1.65 - - V Table 35. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit VDD Operating voltage Read / Write / Erase -1.65 - 3.6 V tprog Programming time for word or half-page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during whole program/erase operation TA = 25 °C, VDD = 3.6 V -300 - µA Maximum current (peak) during program/erase operation -1.5 2.5 mA |
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