STN4NF06L datasheet(3/12 Pages) STMICROELECTRONICS

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STN4NF06L

Electrical ratings

Doc ID 14639 Rev 2

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 16

(1)

Current limited by the package.

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

2.9

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

3.3

Derating factor

0.026

W/°C

dv/dt (3)

ISD ≤ 3 A, di/dt ≤ 150 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25 °C, ID = 4 A, VDD = 30 V.

Single pulse avalanche energy

200

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-pcb (1)

When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 sec.

Thermal resistance junction-PCB max.

°C/W

Rthj-pcb (2)

When mounted on minimum recommended footprint.

Thermal resistance junction-PCB max.

100

°C/W

(3)

For 10 sec. 1.6 mm from case.

Maximum lead temperature for soldering

purpose typ.

260

°C

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