STN4NF06L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN4NF06L

4/12

Doc ID 14639 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

12.8

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 1.5 A

VGS= 5 V, ID= 1.5 A

0.07

0.085

0.10

0.12

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS= 15 V, ID=1.5 A

-3

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz, VGS= 0

340

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48 V, ID = 3 A

VGS = 5 V

(see Figure 15)

1.5

2.8

9nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

rise time

VDD= 30 V, ID= 1.5 A,

RG= 4.7 Ω, VGS= 5 V

(see Figure 14)

td(off)

Turn-off delay time

fall time

VDD= 30 V, ID= 1.5 A,

RG= 4.7 Ω, VGS= 5 V

(see Figure 14)

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