STPSC2006CW datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STPSC2006CW

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Doc ID 018506 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.2 x IF(AV) + 0.09 x IF

(RMS)

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified, per

diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 115 °C, δ = 0.5 Per diode

Tc = 100 °C, δ = 0.5 Per device

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

160

IFRM

Repetitive peak forward current

δ = 0.1, T

c = 110 °C, Tj = 150 °C

Tstg

Storage temperature range

-55 to +175

°C

Maximum operating junction temperature range

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

°C/W

Total

1.2

°C/W

Rth(c)

Coupling

0.4

°C/W

Table 4.

Static electrical characteristics per diode

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

tp = 10 ms, δ < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

-30

150

µA

Tj = 150 °C

210

1500

(2)

tp = 500 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 10 A

-1.4

1.7

Tj = 150 °C

1.6

2.1

Table 5.

Other parameters per diode

Symbol

Parameter

Test conditions

Typ.

Unit

Total capacitive charge

Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs

Tj = 150 °C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

650

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