STPSC2006CW datasheet(3/7 Pages) STMICROELECTRONICS

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STPSC2006CW

Characteristics

Doc ID 018506 Rev 1

3/7

Figure 1.

Forward voltage drop versus

forward current

(typical values, per diode)

Figure 2.

Reverse leakage current versus

reverse voltage applied

(maximum values, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T = 150 °C

T = 175 °C

T = 25 °C

(A)

(V)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100 150 200 250 300 350 400 450 500 550 600

T = 150 °C

T = 175 °C

T = 25 °C

I (µA)

V (V)

Figure 3.

Peak forward current versus case

temperature (per diode)

Figure 4.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

100

125

150

175

δ = t / T

δ = 0.1

δ = 0.5

δ = 1

δ = 0.7

δ = 0.3

I (A)

T (°C)

100

150

200

250

300

350

400

450

500

100

1000

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

C(pF)

V (V)

Figure 5.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 6.

Non-repetitive peak surge forward

current versus pulse duration

(sinusoidal waveform, per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

1.E+00

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

(A)

FSM

t (s)

T = 25 °C

T = 125 °C

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