2SC3604 datasheet(3/8 Pages) NEC

部件名	2SC3604

功能描述	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

PDF	8 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

3 / 8 page

2SC3604

S PARAMETER

VCE = 6 V, IC = 10 mA, ZO = 50

Ω

f (MHz)

|S11|

∠S11

|S21|

∠S21

|S12|

∠S12

|S22|

∠S22

500

.463

-125.3

13.822

106.8

.027

37.9

.516

-36.6

1000

.432

-162.7

7.901

86.2

.0424

48.2

.463

-40.7

1500

.416

178.7

5.250

71.1

.0606

53.1

.421

-46.2

2000

.439

165.0

3.949

59.7

.0758

52.0

.396

-50.9

2500

.451

153.6

3.151

51.7

.097

49.3

.372

-56.5

3000

.470

143.6

2.809

39.6

.111

45.1

.345

-63.7

3500

.482

135.2

2.337

28.6

.124

39.5

.320

-73.2

4000

.494

129.1

2.022

21.3

.132

35.5

.321

-82.0

INSERTION GAIN vs.

COLLECTOR CURRENT

NOISE FIGURE vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

0.5

IC - Collector Current - mA

50 70

VCE = 8 V

f = 2 GHz

VCE = 8 V

f = 2 GHz

3 GHz

4 GHz

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