©

1996

DATA SHEET

Document No. P11675EJ2V0DS00 (2nd edition)

Date Published August 1996 P

Printed in Japan

SILICON TRANSISTOR

2SC3604

The 2SC3604 is an NPN epitaxial transistor designed for low-

noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

and high-gain characteristics in a wide collector current region, and

has a wide dynamic range.

FEATURES

• Low noise

: NF = 1.6 dB TYP. @ f = 2.0 GHz

°°°°°C)

°°°°°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65

mA

Total Power Dissipation

580

mW

Junction Temperature

200

°C

Storage Temperature

-65 to +150

°C

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

PACKAGE DIMENSIONS (in mm)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

1.0

µA

Emitter Cut-off Current

1.0

µA

DC Current Gain

50

100

250

Gain Bandwidth Product

8

GHz

Reverse Transfer Capacitance

0.2

0.7

pF

Noise Figure

NF

Note

1.6

2.3

dB

Insertion Gain

9.0

11

dB

Maximum Available Gain

MAG

13

dB

Power Gain

12

dB

3.8 MIN.

E

CB

E

45

°

0.5

± 0.05

2.55

± 0.2

2.1

φ

3.8 MIN.

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base