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M24C08 数据表(PDF) 21 Page - STMicroelectronics |
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M24C08 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 34 page ![]() DocID024020 Rev 2 21/34 M24C01/02-W M24C01/02-R M24C02-F DC and AC parameters 33 Figure 9. AC measurement I/O waveform Table 9. AC measurement conditions Symbol Parameter Min. Max. Unit Cbus Load capacitance 100 pF SCL input rise/fall time, SDA input fall time - 50 ns Input levels 0.2 VCC to 0.8 VCC V Input and output timing reference levels 0.3 VCC to 0.7 VCC V Table 10. Input parameters Symbol Parameter(1) 1. Characterized only, not tested in production. Test condition Min. Max. Unit CIN Input capacitance (SDA) - - 8 pF CIN Input capacitance (other pins) - - 6 pF ZL Input impedance (WC) VIN < 0.3 VCC 15 70 k Ω ZH VIN > 0.7 VCC 500 - k Ω Table 11. Cycling performance Symbol Parameter Test condition(1) 1. Cycling performance for products identified by process letter T. Max. Unit Ncycle Write cycle endurance TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Table 12. Memory cell data retention Parameter Test condition Min. Unit Data retention(1) 1. For products identified by process letter T. The data retention behavior is checked in production, while the 200-year limit is defined from characterization and qualification results. TA = 55 °C 200 Year MS19774V1 0.8VCC 0.2VCC 0.7VCC 0.3VCC Input and output Timing reference levels Input voltage levels |
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