M24C08 datasheet(23/34 Pages) STMICROELECTRONICS

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M24C01/02-W M24C01/02-R M24C02-F

DC and AC parameters

Table 14. DC characteristics (M24C01/02-R, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition to

those in Table 6 and Table 9)

1. If the application uses the voltage range R device with 2.5 V

≤ Vcc ≤ 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 13 instead of this table.

Min.

Max.

Unit

ILI

Input leakage current

(E2, E1, SCL, SDA)

VIN = VSS or VCC, device in

Standby mode

-± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

0.8

ICC0

Supply current (Write)

During tW, VCC1.8V ≤ VCC < 2.5 V

0.5(2)

2. For devices identified by process letter T, value averaged over tW, characterized only (not tested in

production).

ICC1

Standby supply current

Device not selected(3),

VIN = VSS or VCC, VCC = 1.8 V

3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

-1

µA

VIL

Input low voltage

(SCL, SDA, WC)

2.5 V

≤ VCC

–0.45

0.3 VCC

VCC < 2.5 V

–0.45

0.25 VCC V

VIH

Input high voltage

(SCL, SDA)

VCC < 2.5 V

0.75 VCC

6.5

Input high voltage

(WC)

VCC < 2.5 V

0.75 VCC VCC+ 0.6 V

VOL

Output low voltage

IOL = 0.7 mA, VCC = 1.8 V

0.2

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