IRLR024 datasheet(2/11 Pages) VISHAY

2 / 11 page

IRLR024, IRLU024, SiHLR024, SiHLU024

www.vishay.com

Vishay Siliconix

S13-0164-Rev. D, 04-Feb-13

Document Number: 91322

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

110

°C/W

Maximum Junction-to-Ambient

(PCB Mount)a

RthJA

Maximum Junction-to-Case (Drain)

RthJC

3.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.068

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.0

Gate-Source Leakage

IGSS

VGS = ± 10 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 5.0 V

ID = 8.4 Ab

0.10



VGS = 4.0 V

ID = 7.0 Ab

0.14

Forward Transconductance

gfs

VDS = 25 V, ID = 8.4 Ab

7.3

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

870

Output Capacitance

Coss

360

Reverse Transfer Capacitance

Crss

-53

Total Gate Charge

VGS = 5.0 V

ID = 17 A, VDS = 48 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 17 A,

Rg = 9.0 , RD = 1.7 , see fig. 10b

-11

Rise Time

110

Turn-Off Delay Time

td(off)

-23

Fall Time

-41

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contactc

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 14 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb

130

260

Body Diode Reverse Recovery Charge

Qrr

0.75

1.5

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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