©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10401EJ2V0DS00 (2nd edition)

(Previous No. TD-2413)

Date Published July 1995 P

Printed in Japan

2SC5013

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

PACKAGE DIMENSIONS

in millimeters

Caution; Electrostatic Sensitive Device.

FEATURES

•

Small Package

•

•

Low Noise, High Gain

•

Low Voltage Operation

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5013-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

2SC5013-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

*

Please contact with responsible NEC person, If you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5013)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

150

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

2.1 ± 0.2

1.25 ± 0.1

0.3

(LEADS 2, 3, 4)

1

4

+0.1

–0.05

0.4

+0.1

–0.05

0 to 0.1

0.15

+0.1

–0.05

2

3

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter