2SC5013 datasheet(2/8 Pages) NEC

部件名	2SC5013

功能描述	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

PDF	8 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

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2 / 8 page

2SC5013

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

Collector Cutoff Current

ICBO

1.0

µAVCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

100

250

VCE = 6 V, IC = 10 mA*1

Gain Bandwidth Product

GHz

VCE = 6 V, IC = 10 mA

Feed back Capacitance

Cre

0.25

0.8

VCB = 10 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

7.5

9.5

VCE = 6 V, IC = 10 mA,f = 2.0 GHz

Noise Figure

1.8

3.0

VCE = 6 V, IC = 5 mA,f = 2.0 GHz

*1 Pulse Measurement; PW

≤ 350

µs, Duty Cycle ≤ 2 % Pulsed.

*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank

Marking

R46

R47

R48

hFE

50 to 100

80 to 160

125 to 250

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