2SC5186 datasheet(1/12 Pages) NEC

部件名	2SC5186

功能描述	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

PDF	12 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

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©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5186

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

FEATURES

•

Low Noise

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5186

50 units/box

Embossed tape, 8 mm wide,

2SC5186-T1

3 000 units/reel

Pin 3 (Collector) facing the perforations.

* Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Document No. P12110EJ2V0DS00 (2nd edition)

(Previous No. TC-2483)

Date Published November 1996 N

Printed in Japan

1.6 ± 0.1

0.8 ± 0.1

2

1

3

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

类似零件编号 - 2SC5186

制造商	部件名	数据表	功能描述
NEC	2SC5186	196Kb / 21P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Renesas Technology Corp	2SC5186	270Kb / 9P	NPN SILICON RF TRANSISTOR 2003

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制造商	部件名	数据表	功能描述
NEC	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5179	57Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5182	56Kb / 12P	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5436	77Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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2SC5186 数据表(PDF) 1 Page - NEC

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