2SC5186 datasheet(2/12 Pages) NEC

部件名	2SC5186

功能描述	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

PDF	12 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

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2SC5186

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

Collector Cutoff Current

ICBO

100

VCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

100

VEB = 1 V, IC = 0

DC Current Gain

hFE

140

VCE = 2 V, IC = 20 mA*1

Insertion Power Gain (1)

|S21e|2

8.5

VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain (2)

|S21e|2

6.0

7.5

VCE = 1 V, IC = 10 mA, f = 2 GHz

Noise Figure (1)

1.3

2.0

VCE = 2 V, IC = 3 mA, f = 2 GHz

Noise Figure (2)

1.3

2.0

VCE = 1 V, IC = 3 mA, f = 2 GHz

Gain Bandwidth Product (1)

911

GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

Gain Bandwidth Product (2)

GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

Feed-back Capacitance

Cre

0.4

0.8

VCB = 2 V, IE = 0 mA, f = 1 MHz*2

Measured with pulses: Pulse width

≤ 350

µs, duty clcye ≤ 2 %, pulsed.

Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal

of the bridge.

hFE Class

Class

Marking

hFE

70 to 140

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