SILICON TRANSISTOR

2SC5191

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10395EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1994

©

FEATURES

• Low Voltage Operation, Low Phase Distortion

• Low Noise

• Large Absolute Maximum Collector Current

• Mini Mold Package

EIAJ: SC-59

ORDERING INFORMATION

PART

NUMBER

QUANTITY

PACKING STYLE

2SC5191-T1

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 3 (collector) face to perforation side of the tape.

2SC5191-T2

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 1 (Emitter), Pin 2 (Base) face to perforation side

of the tape.

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

PACKAGE DRAWINGS

(Unit: mm)

2.8±0.2

0.65

1.5

3

1

Marking

2

+0.1

−0.15