2SD602-R datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

2SD602 / 2SD602A

NPN Plastic-Encapsulate Transistor

04-Mar-2011 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

2SD602

Collector to Base Breakdown

Voltage

2SD602A

V(BR)CBO

IC=10µA, IE=0

2SD602

Collector to Emitter Breakdown

Voltage

2SD602A

V(BR)CEO

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0

Collector Cut-Off Current

ICBO

0.1

µA

VCB=20V, IE=0

Emitter Cut-Off Current

IEBO

0.1

µA

VEB=5V, IC=0

hFE (1)

340

VCE=10V, IC=150mA

DC Current Gain

hFE (2)

VCE=10V, IC=500mA

Collector-Emitter Saturation Voltage

VCE(sat)

0.6

IC=300mA, IB=30mA

Transition Frequency

200

MHz VCE=10V, IC=50mA, f=200MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

*Pulse test: Pulse width≦350µS, duty cycle≦2.0%

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