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2SC5409 数据表(PDF) 3 Page - NEC

部件名 2SC5409
功能描述  NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

2SC5409 数据表(HTML) 3 Page - NEC

  2SC5409 Datasheet HTML 1Page - NEC 2SC5409 Datasheet HTML 2Page - NEC 2SC5409 Datasheet HTML 3Page - NEC 2SC5409 Datasheet HTML 4Page - NEC 2SC5409 Datasheet HTML 5Page - NEC 2SC5409 Datasheet HTML 6Page - NEC 2SC5409 Datasheet HTML 7Page - NEC 2SC5409 Datasheet HTML 8Page - NEC  
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background image
2SC5409
3
20
10
0
4
3
2
1
0
0.3
18
16
14
12
10
8
6
4
2
0
0.2
0.1
0
40
30
20
10
0
1
10
100
1
10
100
110
0.1
0.5
1.0
2.0
2.6
100
1
10
100
IC - Collector Current - mA
IC - Collector Current - mA
VCB - Collector to Base Voltage - V
IC - Collector Current - mA
|S21e|2 vs. IC characteristics
fT vs. IC characteristics
NF vs. IC characteristics
Cre vs. VCB
|S21e|2 vs. f characteristics
f - Frequency - GHz
VCE = 2 V
f = 2 GHz
VCE = 2 V
f = 2 GHz
VCE = 2 V
f = 2 GHz
f = 1 MHz
VCE = 2 V
IC = 20 mA
IC = 3 mA
0.4
0.5



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