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2SC5409 数据表(PDF) 2 Page - NEC

部件名 2SC5409
功能描述  NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
PDF  8 Pages
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制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

2SC5409 数据表(HTML) 2 Page - NEC

  2SC5409 Datasheet HTML 1Page - NEC 2SC5409 Datasheet HTML 2Page - NEC 2SC5409 Datasheet HTML 3Page - NEC 2SC5409 Datasheet HTML 4Page - NEC 2SC5409 Datasheet HTML 5Page - NEC 2SC5409 Datasheet HTML 6Page - NEC 2SC5409 Datasheet HTML 7Page - NEC 2SC5409 Datasheet HTML 8Page - NEC  
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2SC5409
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
µA
DC Current Gain
hFE
VCE = 2 V, IC = 20 mA Note 1
70
140
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
13
16
GHz
Feed-back Capacitance
Cre
VCB = 2 V, IE = 0, f = 1 MHz Note 2
0.2
0.3
pF
Insertion Power Gain
|S21e|2
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
1.1
1.8
dB
Rank
FB
Marking
T97
hFE
70 to 140
Notes 1. Pulse measurement PW
≤ 350
µs, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (TA = 25
°C)
200
100
0
25
20
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
15
10
5
0
50
1.0
2.0
3.0
100
150
50
40
30
20
10
0
0.5
1.0
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
µ
VCE - Collector to Emitter Voltage - V
VCE = 2 V
IB = 20
A
1
500
100
50
20
10
200
2
5
10
20
50
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
VCE = 1 V
VCE = 2 V
90 mW
Free Air
µ
µ
µ
µ
µ
µ
µ
µ
µ



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