Elektronische Bauelemente

SSDF9504

N And P-Channel Enhancement Mode Power MOSFET

14-Nov-2012 Rev. B

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

N-Ch

40

-

-

Drain-Source Breakdown

Voltage

P-Ch

-40

-

-

V

N-Ch

1

-

2.5

Gate-Threshold Voltage

P-Ch

-1

-

-2.5

V

N-Ch

-

8

-

Forward Transconductance

P-Ch

-

12.6

-

S

N-Ch

-

-

±100

Gate-Source Leakage Current

P-Ch

-

-

nA

N-Ch

-

-

1

P-Ch

-

-

-1

N-Ch

-

-

5

Drain-Source Leakage Current

P-Ch

-

-

-5

μA

N-Ch

-

-

26

P-Ch

-

-

40

N-Ch

-

-

35

Drain-Source On-Resistance

2

P-Ch

-

-

65

mΩ

N-Ch

-

5.5

-

Total Gate Charge

P-Ch

-

9

-

N-Ch

-

1.25

-

Gate-Source Charge

P-Ch

-

2.54

-

N-Ch

-

2.5

-

Gate-Drain (“Miller”) Charge

P-Ch

-

3.1

-

nC

N-Channel

P-Channel

N-Ch

-

8.9

-

Turn-on Delay Time

P-Ch

-

19.2

-

N-Ch

-

2.2

-

Rise Time

P-Ch

-

12.8

-

N-Ch

-

41

-

Turn-off Delay Time

P-Ch

-

48.6

-

N-Ch

-

2.7

-

Fall Time

P-Ch

-

4.6

-

nS

N-Channel

P-Channel

N-Ch

-

593

-

Input Capacitance

P-Ch

-

1004

-

N-Ch

-

76

-

Output Capacitance

P-Ch

-

108

-

N-Ch

-

56

-

Reverse Transfer Capacitance

P-Ch

-

80

-

pF

N-Channel

P-Channel

N-Ch

-

2.6

5.2

Gate Resistance

P-Ch

-

13

16

Ω