Elektronische Bauelemente

SSDF9504

N And P-Channel Enhancement Mode Power MOSFET

14-Nov-2012 Rev. B

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Guaranteed Avalanche Chatacteristics

N-Ch

9

-

-

Single Pulse Avalanche Energy

5

P-Ch

20

-

-

mJ

Source-Drain Diode

N-Ch

-

-

1.2

Forward On Voltage

2

P-Ch

-

-

-1

V

N-Ch

-

-

23

Continuous Source Current

1,6

P-Ch

-

-

-20

A

N-Ch

-

-

45

Pulsed Source Current

2,6

P-Ch

-

-

-44

A

Notes:

1

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

Pulse width≦300μs, duty cycle≦2%.

3 The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A

4 .The power dissipation is limited by 150 ℃junction temperature

5 The Min. value is 100% EAS tested guarantee.

6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.